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| www..com SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 0.0085 @ VGS = 4.5 V rDS(on) (W) 0.0075 @ VGS = 10 V ID (A) 75a TO-220AB D TO-263 G DRAIN connected to TAB G GDS Top View SUP75N06-07L DS S N-Channel MOSFET Top View SUB75N06-07L www..com Parameter Symbol VGS TC = 25_C TC = 125_C ID IDM IAR L = 0.1 mH TC = 25_C (TO-220AB and TO-263) EAR PD TJ, Tstg ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Limit "20 75a 55 240 60 280 250c 3.7 -55 to 175 W _C mJ A Unit V Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C (TO-263)d THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 70776 S-05111--Rev. F, 10-Dec-00 www.vishay.com Free Air (TO-220AB) RthJA RthJC Symbol Limit 40 62.5 0.6 Unit _C/W 2-1 www. .com www..com SUP/SUB75N06-07L Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 20A VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 120 0.0061 0.0071 0.0075 0.0085 0.012 0.015 S W 60 V 1.0 3.0 "100 1 50 250 A m mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg VGS = 0 V, VDS = 25 V, f = 1 MHz 6300 920 350 75 18 27 14 VDD = 30 V, RL = 0.47 W ID ^ 75 A, VGEN = 10 V, RG = 2.5 W 15 150 50 40 40 300 100 ns 120 nC pF www..com Qgs VDS = 30 V, VGS = 10 V, ID = 75 A Qgd td(on) tr td(off) tf Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 75 A, di/dt = 100 A/ms m IF = 75 A , VGS = 0 V 1.0 67 6 0.2 75 A 240 1.3 120 8 0.48 V ns A mC Notes a. Pulse test: pulse width v 300 msec, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2-2 Document Number: 70776 S-05111--Rev. F, 10-Dec-00 www. .com www..com SUP/SUB75N06-07L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10 thru 5 V 150 I D - Drain Current (A) 150 I D - Drain Current (A) 4V 200 Transfer Characteristics 200 100 100 50 TC = 125_C 25_C -55_C 50 3V 0 0 2 4 6 8 10 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 180 -55_C 0.010 On-Resistance vs. Drain Current 150 r DS(on) - On-Resistance ( ) 25_C g fs - Transconductance (S) 120 0.008 VGS = 4.5 V 90 www..com 125_C 0.006 0.004 0.002 VGS = 10 V 60 30 0 0 20 40 60 80 100 0.000 0 20 40 60 80 100 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Capacitance 10000 20 Gate Charge 8000 C - Capacitance (pF) Ciss 6000 V GS - Gate-to-Source Voltage (V) 16 VDS = 30 V ID = 75 A 12 4000 8 2000 Crss 0 0 10 20 30 Coss 4 0 40 50 60 0 25 50 75 100 125 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 70776 S-05111--Rev. F, 10-Dec-00 www.vishay.com 2-3 www. .com www..com SUP/SUB75N06-07L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.2 VGS = 10 V ID = 30 A I S - Source Current (A) TJ = 150_C TJ = 25_C 10 100 Source-Drain Diode Forward Voltage 1.9 r DS(on) - On-Resistance ( ) (Normalized) 1.6 1.3 1.0 0.7 0.4 -50 1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 100 500 Safe Operating Area 80 I D - Drain Current (A) I D - Drain Current (A) www..com 100 10 TC = 25_C Single Pulse Limited by rDS(on) 10 ms 60 100 ms 40 1 ms 20 10 ms 100 ms dc 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance 1 0.1 1 10 VDS - Drain-to-Source Voltage (V) 100 Normalized Thermal Transient Impedance, Junction-to-Case Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-5 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 3 www.vishay.com 2-4 Document Number: 70776 S-05111--Rev. F, 10-Dec-00 www. .com www..com Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. www..com Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 www. .com |
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